Sublevo
ISC 2027
All chaptersPhysics · Unit 9

Electronic Devices

6 articles23 formulas33 ways the board asks it
PHYSemiconductors & Energy Bands

Energy Bands & Band Gap

The band gap EgE_g is the energy separation between the top of the valence band and the bottom of the conduction band; an electron must absorb at least EgE_g to cross it, and an LED emits a photon of energy ≈Eg\approx E_g when an electron falls back. ISC numericals link EgE_g to the longest absorbable wavelength or to the emitted LED wavelength, so the E=hc/λE = hc/\lambda relation and the eV-to-joule conversion are the heart of this subtopic.

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Photon energy from wavelength
E=hcλE = \dfrac{hc}{\lambda}
EE = photon energy, h=6.63×10−34 J sh = 6.63 \times 10^{-34}\,\text{J\,s}, c=3×108 m s−1c = 3 \times 10^{8}\,\text{m\,s}^{-1}, λ\lambda = wavelength in metres.
Maximum absorbable wavelength
λmax=hcEg\lambda_{max} = \dfrac{hc}{E_g}
EgE_g = band gap (in joules). Longest wavelength that can still excite an electron across the gap.
Band gap from LED wavelength
Eg=hcλE_g = \dfrac{hc}{\lambda}
λ\lambda = emitted LED wavelength; the emitted photon energy approximately equals the band gap.
Energy unit conversion
E(eV)=E(J)1.6×10−19E_{(\text{eV})} = \dfrac{E_{(\text{J})}}{1.6 \times 10^{-19}}
Converts joules to electron-volts; 1 eV=1.6×10−19 J1\,\text{eV} = 1.6 \times 10^{-19}\,\text{J}.
  • Only photons with energy ≥Eg\geq E_g can excite an electron across the gap, so λmax=hc/Eg\lambda_{max} = hc/E_g is a cut-off (longest) wavelength.
  • Larger EgE_g means shorter λmax\lambda_{max} — wide-gap materials respond to higher-frequency light.
  • An LED's emitted photon energy is close to EgE_g, giving its characteristic colour.
  • Use hc≈1240 eV nmhc \approx 1240\,\text{eV\,nm} as a fast shortcut: Eg(eV)=1240/λ(nm)E_g(\text{eV}) = 1240/\lambda(\text{nm}).
  • Always convert nm\text{nm} to metres (1 nm=10−9 m1\,\text{nm} = 10^{-9}\,\text{m}) when using SI hh and cc.
  • Band gaps: Si ≈1.1 eV\approx 1.1\,\text{eV}, Ge ≈0.7 eV\approx 0.7\,\text{eV}; insulators have Eg>3 eVE_g > 3\,\text{eV}.
  • Answers in joules can be converted to eV by dividing by 1.6×10−191.6 \times 10^{-19} for comparison with standard band-gap values.
Where the marks go
  • Forgetting to convert wavelength from nm to m, giving an answer off by 10910^{9}.
  • Reporting EgE_g in joules when the question expects eV (or vice versa) — always divide/multiply by 1.6×10−191.6 \times 10^{-19}.
  • Confusing the cut-off as a minimum wavelength; λmax\lambda_{max} is the longest wavelength that still works.
  • Using λ\lambda in E=hfE = hf or frequency ff in E=hc/λE = hc/\lambda — pick the form that matches the given quantity.
How the board asks it
  • NumericalE=hc/λE=hc/\lambda for an LED
    A light-emitting diode emits monochromatic light of wavelength 660 nm660\,\text{nm}. Calculate the energy band gap EgE_g (in eV\text{eV}) of the semiconductor used to fabricate it. (Take h=6.6×10−34 J sh = 6.6 \times 10^{-34}\,\text{J s}, c=3×108 m s−1c = 3 \times 10^{8}\,\text{m s}^{-1} and 1 eV=1.6×10−19 J1\,\text{eV} = 1.6 \times 10^{-19}\,\text{J}.)
  • Numericalcut-off wavelength λmax=hc/Eg\lambda_{max}=hc/E_g
    The energy band gap of a semiconductor is 1.24 eV1.24\,\text{eV}. Find the maximum wavelength of radiation that can be absorbed to excite an electron from the valence band to the conduction band.
  • Define / statevalence-to-conduction band separation
    Define the term 'energy band gap' of a solid and state its approximate value for silicon.
  • Distinguishband gaps of conductor, semiconductor, insulator
    Distinguish between a conductor, a semiconductor and an insulator on the basis of their energy band gaps, quoting a typical value of EgE_g for each.
  • Give reasonslarger EgE_g gives shorter λmax\lambda_{max}
    Explain why a wide-band-gap semiconductor can absorb only shorter-wavelength light than a narrow-band-gap one.

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Written for Sublevo. Question text quoted anywhere in these notes is the Council’s and carries its year and paper; the board’s own diagrams are not reproduced.