Sublevo
ISC 2027
All chaptersPhysics · Unit 9

Electronic Devices

6 articles23 formulas33 ways the board asks it
PHYExam Practice

Multiple Choice & Assertion-Reason

This is a chapter-wide rapid-revision article spanning semiconductors, diodes, transistors and logic gates. The MCQs and Assertion-Reason items test crisp factual recall: the intrinsic equality ne=nhn_e = n_h, band-gap magnitudes, depletion-region behaviour under bias, ripple frequencies, Zener operation, the α\alpha-β\beta link, CE phase reversal and gate truth tables.

These carry quick marks, so the goal is to internalise the standard ISC facts and the few formulas that recur across the whole chapter.

Mass-action law
ne nh=ni2n_e \, n_h = n_i^{2}
nen_e = electron concentration, nhn_h = hole concentration, nin_i = intrinsic concentration. For intrinsic material ne=nh=nin_e = n_h = n_i.
Current gain relation
β=α1−α,α=β1+β\beta = \dfrac{\alpha}{1 - \alpha}, \qquad \alpha = \dfrac{\beta}{1 + \beta}
α\alpha = common-base gain (IC/IEI_C/I_E), β\beta = common-emitter gain (IC/IBI_C/I_B). With α=0.98\alpha = 0.98, β=49\beta = 49.
Ripple frequency of rectifier
fout=m finf_{out} = m \, f_{in}
finf_{in} = mains frequency, m=1m = 1 for half-wave and m=2m = 2 for full-wave. For 50 Hz50\,\text{Hz} mains: 50 Hz50\,\text{Hz} (half-wave), 100 Hz100\,\text{Hz} (full-wave).
Photon energy and band gap
Eg=hcλE_g = \dfrac{hc}{\lambda}
EgE_g = band gap, hh = Planck constant, cc = speed of light, λ\lambda = wavelength of absorbed/emitted photon. Conversion: 1 eV=1.6×10−19 J1\,\text{eV} = 1.6 \times 10^{-19}\,\text{J}.
  • In an intrinsic semiconductor every broken bond gives one electron and one hole, so ne=nh=nin_e = n_h = n_i exactly.
  • Approximate band gaps: conductor ≈0\approx 0 (overlapping bands), semiconductor ≈1 eV\approx 1\,\text{eV} (Si 1.1 eV1.1\,\text{eV}, Ge 0.7 eV0.7\,\text{eV}), insulator >3 eV> 3\,\text{eV} (diamond ≈6 eV\approx 6\,\text{eV}).
  • Forward bias narrows the depletion layer and lowers the barrier; reverse bias widens it and raises the barrier.
  • A Zener used as a regulator always works in reverse bias beyond the breakdown voltage, where VV stays nearly constant.
  • Pentavalent (donor) doping →\to n-type, electrons majority; trivalent (acceptor) doping →\to p-type, holes majority.
  • A CE amplifier inverts the signal: input and output a.c. voltages are 180∘180^{\circ} out of phase.
  • NAND output is 00 only when both inputs are 11; NOR output is 11 only when all inputs are 00 (NOR = OR followed by NOT, so R correctly explains A).
  • Full-wave rectification doubles the ripple frequency relative to the input because both half-cycles produce output pulses.
Where the marks go
  • Confusing α\alpha and β\beta: α<1\alpha < 1 (close to 11) while β\beta is large (tens to hundreds); never write β=α/(1+α)\beta = \alpha/(1+\alpha).
  • Saying half-wave doubles the ripple frequency — only full-wave does (100 Hz100\,\text{Hz} from 50 Hz50\,\text{Hz}); half-wave keeps it at 50 Hz50\,\text{Hz}.
  • Stating a Zener regulates in forward bias — it must be reverse-biased beyond breakdown.
  • Mixing up NAND and NOR truth-table conditions, or forgetting the 180∘180^{\circ} phase reversal in CE.
How the board asks it
  • Assertion–Reasonzener reverse-bias operation in the breakdown region
    Assertion (A): A Zener diode used as a voltage regulator is always connected in reverse bias. Reason (R): In the breakdown region the voltage across the Zener stays nearly constant even though the current changes. Choose: (a) both A and R are true and R is the correct explanation of A, (b) both A and R are true but R is not the correct explanation of A, (c) A is true but R is false, (d) A is false but R is true.
  • Define / stateintrinsic carrier equality ne=nh=nin_e = n_h = n_i
    Choose the correct option: In an intrinsic semiconductor at a given temperature the carrier concentrations satisfy (a) ne>nhn_e > n_h, (b) ne<nhn_e < n_h, (c) ne=nh=nin_e = n_h = n_i, (d) nenh=0n_e n_h = 0.
  • Numericalfull-wave rectifier doubles the ripple frequency
    A full-wave rectifier is fed from 50 Hz50\,\text{Hz} a.c. mains. The ripple frequency of its output is (a) 25 Hz25\,\text{Hz}, (b) 50 Hz50\,\text{Hz}, (c) 100 Hz100\,\text{Hz}, (d) 200 Hz200\,\text{Hz}. Choose the correct option.
  • Applicationnand gate truth table
    Select the correct option: The output of a two-input NAND gate is 00 only when (a) both inputs are 00, (b) both inputs are 11, (c) any one input is 11, (d) any one input is 00.
  • Distinguishthe α\alpha-β\beta current-gain relation
    For a transistor in the common-emitter configuration the current gains α\alpha and β\beta satisfy (a) α<1\alpha < 1 and β\beta is large, (b) α>1\alpha > 1 and β<1\beta < 1, (c) β=α/(1−α)\beta = \alpha/(1-\alpha) with β<α\beta < \alpha, (d) α=β\alpha = \beta. Choose the correct statement.

Written for Sublevo. Question text quoted anywhere in these notes is the Council’s and carries its year and paper; the board’s own diagrams are not reproduced.