Sublevo
ISC 2027
All chaptersPhysics · Unit 9

Electronic Devices

6 articles23 formulas33 ways the board asks it
PHYSemiconductors & Energy Bands

Intrinsic & Extrinsic Semiconductors

An intrinsic semiconductor is a pure crystal (Si, Ge) in which thermally generated electron-hole pairs give equal carrier concentrations, while an extrinsic semiconductor is doped to make one carrier type dominate. This subtopic is examined through carrier-concentration calculations using the mass-action law and conductivity/resistivity calculations using carrier mobilities, so you must handle SI units of nn (m−3\text{m}^{-3}) and μ\mu (m2 V−1 s−1\text{m}^{2}\,\text{V}^{-1}\,\text{s}^{-1}) carefully.

Mass-action law
ne nh=ni2n_e \, n_h = n_i^{2}
nin_i = intrinsic carrier concentration. After doping, the minority concentration is found from nh=ni2/nen_h = n_i^{2}/n_e (n-type) or ne=ni2/nhn_e = n_i^{2}/n_h (p-type).
Conductivity of a semiconductor
σ=e(neμe+nhμh)\sigma = e\left(n_e \mu_e + n_h \mu_h\right)
σ\sigma = conductivity (S m−1\text{S\,m}^{-1} or Ω−1m−1\Omega^{-1}\text{m}^{-1}), e=1.6×10−19 Ce = 1.6 \times 10^{-19}\,\text{C}, μe,μh\mu_e,\mu_h = electron and hole mobilities.
Intrinsic conductivity
σi=e ni(μe+μh)\sigma_i = e \, n_i \left(\mu_e + \mu_h\right)
Special case with ne=nh=nin_e = n_h = n_i. Used for pure Ge/Si.
Resistivity
ρ=1σ\rho = \dfrac{1}{\sigma}
ρ\rho = resistivity (Ω m\Omega\,\text{m}). Reciprocal of conductivity.
  • In intrinsic material ne=nh=nin_e = n_h = n_i; doping raises one carrier hugely and (by mass action) suppresses the other.
  • Donor (pentavalent) doping gives n-type with ne≫nhn_e \gg n_h; acceptor (trivalent) doping gives p-type with nh≫nen_h \gg n_e.
  • Even in heavily doped material the sample stays electrically neutral; the dopant supplies fixed ionised cores.
  • nin_i rises sharply with temperature (more pairs), so semiconductor conductivity increases with TT — opposite to metals.
  • Electron mobility μe\mu_e exceeds hole mobility μh\mu_h because electrons move in the conduction band more freely.
  • In an extrinsic sample the majority-carrier term dominates σ\sigma, but include both terms unless told otherwise.
  • Keep all nn in m−3\text{m}^{-3} and μ\mu in m2 V−1 s−1\text{m}^{2}\,\text{V}^{-1}\,\text{s}^{-1} for SI consistency.
Where the marks go
  • Forgetting to use mass action: students set the minority carrier to zero instead of ni2/nmajorityn_i^{2}/n_{majority}.
  • Dropping the factor ee in σ=e(neμe+nhμh)\sigma = e(n_e\mu_e + n_h\mu_h) or using ee in the wrong power of ten.
  • Mixing CGS-style cm−3\text{cm}^{-3} with SI m−3\text{m}^{-3} (1 cm−3=106 m−31\,\text{cm}^{-3} = 10^{6}\,\text{m}^{-3}).
  • Reporting resistivity without inverting σ\sigma, or quoting ρ\rho in Ω\Omega instead of Ω m\Omega\,\text{m}.
How the board asks it
  • Numericalconductivity from carrier concentration and mobility
    A specimen of silicon has electron and hole concentrations ne=5×1019 m−3n_e = 5 \times 10^{19}\,\text{m}^{-3} and nh=5×1019 m−3n_h = 5 \times 10^{19}\,\text{m}^{-3} with mobilities μe=0.13 m2 V−1 s−1\mu_e = 0.13\,\text{m}^2\,\text{V}^{-1}\,\text{s}^{-1} and μh=0.05 m2 V−1 s−1\mu_h = 0.05\,\text{m}^2\,\text{V}^{-1}\,\text{s}^{-1}. Calculate the conductivity and resistivity of the sample. (Take e=1.6×10−19 Ce = 1.6 \times 10^{-19}\,\text{C}.)
  • Numericalmass-action law
    A pure germanium crystal has intrinsic carrier concentration ni=2.4×1019 m−3n_i = 2.4 \times 10^{19}\,\text{m}^{-3}. It is doped with donor atoms so that the electron concentration becomes ne=4.8×1022 m−3n_e = 4.8 \times 10^{22}\,\text{m}^{-3}. Calculate the hole concentration nhn_h and state whether the sample is n-type or p-type.
  • Give reasonsnin_i rises with temperature
    Account for the fact that the conductivity of a pure semiconductor increases with rise in temperature, whereas that of a metallic conductor decreases.
  • Distinguishdonor vs acceptor doping
    Distinguish between an n-type and a p-type extrinsic semiconductor with respect to the type of dopant used and the majority charge carriers.
  • Define / stateintrinsic semiconductor and ne=nh=nin_e = n_h = n_i
    Define an intrinsic semiconductor and state the relation between its electron, hole and intrinsic carrier concentrations at a given temperature.
  • Give reasonselectrical neutrality on doping
    An n-type semiconductor has a large number of free electrons as majority carriers. Explain, with reason, why the crystal as a whole remains electrically neutral.

Practise this topic

Written for Sublevo. Question text quoted anywhere in these notes is the Council’s and carries its year and paper; the board’s own diagrams are not reproduced.