PHYSemiconductors & Energy Bands
Intrinsic & Extrinsic Semiconductors
An intrinsic semiconductor is a pure crystal (Si, Ge) in which thermally generated electron-hole pairs give equal carrier concentrations, while an extrinsic semiconductor is doped to make one carrier type dominate. This subtopic is examined through carrier-concentration calculations using the mass-action law and conductivity/resistivity calculations using carrier mobilities, so you must handle SI units of () and () carefully.
Mass-action law
= intrinsic carrier concentration. After doping, the minority concentration is found from (n-type) or (p-type).
Conductivity of a semiconductor
= conductivity ( or ), , = electron and hole mobilities.
Intrinsic conductivity
Special case with . Used for pure Ge/Si.
Resistivity
= resistivity (). Reciprocal of conductivity.
- In intrinsic material ; doping raises one carrier hugely and (by mass action) suppresses the other.
- Donor (pentavalent) doping gives n-type with ; acceptor (trivalent) doping gives p-type with .
- Even in heavily doped material the sample stays electrically neutral; the dopant supplies fixed ionised cores.
- rises sharply with temperature (more pairs), so semiconductor conductivity increases with — opposite to metals.
- Electron mobility exceeds hole mobility because electrons move in the conduction band more freely.
- In an extrinsic sample the majority-carrier term dominates , but include both terms unless told otherwise.
- Keep all in and in for SI consistency.
- Forgetting to use mass action: students set the minority carrier to zero instead of .
- Dropping the factor in or using in the wrong power of ten.
- Mixing CGS-style with SI ().
- Reporting resistivity without inverting , or quoting in instead of .
- Numericalconductivity from carrier concentration and mobilityA specimen of silicon has electron and hole concentrations and with mobilities and . Calculate the conductivity and resistivity of the sample. (Take .)
- Numericalmass-action lawA pure germanium crystal has intrinsic carrier concentration . It is doped with donor atoms so that the electron concentration becomes . Calculate the hole concentration and state whether the sample is n-type or p-type.
- Give reasons rises with temperatureAccount for the fact that the conductivity of a pure semiconductor increases with rise in temperature, whereas that of a metallic conductor decreases.
- Distinguishdonor vs acceptor dopingDistinguish between an n-type and a p-type extrinsic semiconductor with respect to the type of dopant used and the majority charge carriers.
- Define / stateintrinsic semiconductor andDefine an intrinsic semiconductor and state the relation between its electron, hole and intrinsic carrier concentrations at a given temperature.
- Give reasonselectrical neutrality on dopingAn n-type semiconductor has a large number of free electrons as majority carriers. Explain, with reason, why the crystal as a whole remains electrically neutral.
Written for Sublevo. Question text quoted anywhere in these notes is the Council’s and carries its year and paper; the board’s own diagrams are not reproduced.